Colossal dielectric constant in high entropy oxides

High dielectric constant oxides

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

Colossal Magnetoresistance in Ce Doped Manganese Oxides

Dielectric relaxation of high-k oxides

Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectr...

Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for AdvancedCMOS Devices

A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO₃) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO₃ as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Care...

On Materials of High Dielectric Constant.

* This work was supported by a grant from the National Science Foundation. 'Yarmolinsky, M. B., and G. L. de la Haba, these PROCEEDINGS, 45, 1721 (1959). 2 Nathans, D., and F. Lipmann, these PROCEEDINGS, 47, 497 (1961). 3Wecker, E., and E. Schonne, these PROCEEDINGS, 47, 278 (1961). 4 Wecker, E., and A. Richter, in Basic Mechanisms in Animal Virus Biology, Cold Spring Harbor Symposia on Quantit...